- Sulfur Hexafluoride is for the semiconductor industry for plasma etching prior to chemical vapor deposition (CVD). These processes include Oxide etching, Nitride etching, and wafer cleaning. SF6 gas, which is itself inert, disassociates in the pressence of an RF field to form reactive Fluroide ions. These highly reactive ions are excellent for etching Tungsten and Tungsten Silicide films. Reaction products formed are gaseous Tungsten Hexafluoride and Silicon Tertafluoride. These volatile waste products are carried off in the exhaust gas stream. Oxygen can be injected into the SF6 inlet gas stream to react with the Sulfur in the plasma to form volatile Sulfur/Oxygen gases that will also exit the process equipment in the exhaust gas.
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